*For representation only.
FF4MR12W2M1HB11BPSA1
| Mfr. No: | FF4MR12W2M1HB11BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules EASY |
| Lifecycle: | Active |
| Datasheet: | FF4MR12W2M1HB11BPSA1 Datasheet (PDF) |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tj) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 200A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 80mA |
| Gate Charge (Qg) (Max) @ Vgs | 594nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 17600pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
📦
Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 15 |
7,061
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
ℹ
Product Overview
The FF4MR12W2M1HB11BPSA1, made by Infineon Technologies, belongs to the mosfet modules product category. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 170A (Tj) and rds on (max) @ id, vgs: 4mOhm @ 200A, 18V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks FF4MR12W2M1HB11BPSA1 for same-day shipping with genuine parts guaranteed.
