*For representation only.
FF6MR12W2M1HPB11BPSA1
| Mfr. No: | FF6MR12W2M1HPB11BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 1200 V CoolSiC Mosfet Half-Bridge Module |
| Datasheet: | FF6MR12W2M1HPB11BPSA1 Datasheet (PDF) |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tj) |
| Rds On (Max) @ Id, Vgs | 5.63mOhm @ 200A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 80mA |
| Gate Charge (Qg) (Max) @ Vgs | 496nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 14700pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 18 |
11,071
Units In Stock
📦 Tray
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- Global shipping
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Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 231 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the FF6MR12W2M1HPB11BPSA1 is classified under mosfet modules. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 200A (Tj) and rds on (max) @ id, vgs: 5.63mOhm @ 200A, 15V. This part has a typical lead time of 231 Days from factory and ships with a full manufacturer datasheet available for download. Get FF6MR12W2M1HPB11BPSA1 from Simplytronix, shipped same day with a genuine parts guarantee.
