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FS13MR12W2M1HPB11BPSA1

Mfr. No: FS13MR12W2M1HPB11BPSA1
Mfr.: Infineon Technologies
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules CoolSiC MOSFET sixpack module 1200 V
Datasheet: FS13MR12W2M1HPB11BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 6 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 50A
Rds On (Max) @ Id, Vgs 11.7mOhm @ 62.5A, 18V
Vgs(th) (Max) @ Id 5.15V @ 28mA
Gate Charge (Qg) (Max) @ Vgs 200nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 6050pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 18
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,518
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

FS13MR12W2M1HPB11BPSA1 is a discrete semiconductor modules part produced by Infineon Technologies for use across a range of applications. Among its key specs are technology: Silicon Carbide (SiC), configuration: 6 N-Channel, FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 50A and rds on (max) @ id, vgs: 11.7mOhm @ 62.5A, 18V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order FS13MR12W2M1HPB11BPSA1 from Simplytronix for authenticated stock and same-day order processing.

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