*For representation only.
DF11MR12W1M1HFB67BPSA1
| Mfr. No: | DF11MR12W1M1HFB67BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules Booster 1200 V CoolSiC MOSFET Module |
| Datasheet: | DF11MR12W1M1HFB67BPSA1 Datasheet (PDF) |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | - |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | - |
| Operating Temperature | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY1B |
📦
Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 24 |
11,502
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
ℹ
Product Overview
The DF11MR12W1M1HFB67BPSA1, made by Infineon Technologies, belongs to the discrete semiconductor modules product category. This part is specified with technology: Silicon Carbide (SiC), configuration: -, FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: - and rds on (max) @ id, vgs: -. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks DF11MR12W1M1HFB67BPSA1 for same-day shipping with genuine parts guaranteed.
