| Mfr. No: | DF16MR12W1M1HFB67BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules Booster 1200 V CoolSiC MOSFET Module |
| Lifecycle: | Active |
| Datasheet: | DF16MR12W1M1HFB67BPSA1 Datasheet (PDF) |
| Technology | - |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A |
| Rds On (Max) @ Id, Vgs | 32.3mOhm @ 25A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Packaging | Tray |
| Standard Pack Qty | 24 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Manufactured by Infineon Technologies, the DF16MR12W1M1HFB67BPSA1 is classified under discrete semiconductor modules. This component is defined by technology: -, configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 25A and rds on (max) @ id, vgs: 32.3mOhm @ 25A, 18V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Get DF16MR12W1M1HFB67BPSA1 from Simplytronix, shipped same day with a genuine parts guarantee.