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DF23MR12W1M1B11BOMA1 Infineon Technologies
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DF23MR12W1M1B11BOMA1

Mfr. No: DF23MR12W1M1B11BOMA1
Mfr.: Infineon Technologies
Category: MOSFET Modules
Description: MOSFET Modules
Lifecycle: Obsolete
Datasheet: DF23MR12W1M1B11BOMA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 25A
Rds On (Max) @ Id, Vgs 45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id 5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-EASY1BM-2
📦 Product Attributes
Packaging Tray
Standard Pack Qty 24
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement DF23MR12W1M1B11B
9,806
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542319090
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Manufactured by Infineon Technologies, the DF23MR12W1M1B11BOMA1 is classified under mosfet modules. Key specifications include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 25A and rds on (max) @ id, vgs: 45mOhm @ 25A, 15V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Get DF23MR12W1M1B11BOMA1 from Simplytronix, shipped same day with a genuine parts guarantee.

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