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| Mfr. No: | DF23MR12W1M1PB11BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules LOW POWER EASY |
| Datasheet: | DF23MR12W1M1PB11BPSA1 Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tj) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY1B-2 |
| Packaging | Tray |
| Standard Pack Qty | 30 |
| Category | MOSFET Modules |
| RoHS | |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| USHTS | 8541210095 |
| ECCN | EAR99 |
As a mosfet modules component, the DF23MR12W1M1PB11BPSA1 is manufactured and supplied by Infineon Technologies. It features technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 25A (Tj) and rds on (max) @ id, vgs: 45mOhm @ 25A, 15V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries DF23MR12W1M1PB11BPSA1 in stock, backed by a genuine parts guarantee and quick dispatch.