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F3L8MXTR12C2M2H11BPSA1 Infineon Technologies
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F3L8MXTR12C2M2H11BPSA1

Mfr. No: F3L8MXTR12C2M2H11BPSA1
Mfr.: Infineon Technologies
Category: MOSFET Modules
Description: MOSFET Modules EasyPACK 2C CoolSiC MOSFET M2 .XT, 3-level module 1200 V, 8 mOhm with NTC temperature sensor and high current PressFIT contact technology
Lifecycle: Active
Datasheet: F3L8MXTR12C2M2H11BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 95A
Rds On (Max) @ Id, Vgs 8.3mOhm @ 75A, 18V
Vgs(th) (Max) @ Id 5.15V @ 33mA
Gate Charge (Qg) (Max) @ Vgs 237nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 7210pF @ 800V
Power - Max 20mW
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 15
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,471
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 70 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

Infineon Technologies's F3L8MXTR12C2M2H11BPSA1 is a widely used mosfet modules part in electronic designs. Key specifications include technology: Silicon Carbide (SiC), configuration: 4 N-Channel, FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 95A and rds on (max) @ id, vgs: 8.3mOhm @ 75A, 18V. This part has a typical lead time of 70 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies F3L8MXTR12C2M2H11BPSA1 with same-day shipping and guaranteed authenticity.

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