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F413MXTR12C1M2QH11BPSA1 Infineon Technologies
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F413MXTR12C1M2QH11BPSA1

Mfr. No: F413MXTR12C1M2QH11BPSA1
Mfr.: Infineon Technologies
Category: MOSFET Modules
Description: MOSFET Modules EasyPACK 1C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 13 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
Lifecycle: Active
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Full Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 60A (Tj)
Rds On (Max) @ Id, Vgs 12.5mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5.15V @ 22mA
Gate Charge (Qg) (Max) @ Vgs 158nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,942
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 70 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

The F413MXTR12C1M2QH11BPSA1 from Infineon Technologies falls under the mosfet modules category. It features technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 60A (Tj) and rds on (max) @ id, vgs: 12.5mOhm @ 50A, 18V. This part has a typical lead time of 70 Days from factory. F413MXTR12C1M2QH11BPSA1 is available through Simplytronix, sourced and verified for authenticity.

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