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| Mfr. No: | F48MR12W2M1HPB76BPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules CoolSiC MOSFET fourpack module 1200 V |
| Lifecycle: | Active |
| Datasheet: | F48MR12W2M1HPB76BPSA1 Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 75A |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 100A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 297nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800pF @ 800V |
| Power - Max | 20mW |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
| Packaging | Tray |
| Standard Pack Qty | 18 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
The F48MR12W2M1HPB76BPSA1 from Infineon Technologies falls under the discrete semiconductor modules category. Among its key specs are technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 75A and rds on (max) @ id, vgs: 12mOhm @ 100A, 18V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. F48MR12W2M1HPB76BPSA1 is available through Simplytronix, sourced and verified for authenticity.