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F899MR07W1D7B11ABPSA1 Infineon Technologies
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F899MR07W1D7B11ABPSA1

Mfr. No: F899MR07W1D7B11ABPSA1
Mfr.: Infineon Technologies
Category: MOSFET Modules
Description: MOSFET Modules EasyPACK 1B module with CoolMOS CFD7A Automotive MOSFET and PressFIT / NTC
Lifecycle: Active
Datasheet: F899MR07W1D7B11ABPSA1 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 8 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 12A (Tj)
Rds On (Max) @ Id, Vgs 119mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.45V @ 580µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2310pF @ 400V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 24
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,260
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 13 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

The F899MR07W1D7B11ABPSA1 from Infineon Technologies falls under the mosfet modules category. This component is defined by technology: MOSFET (Metal Oxide), configuration: 8 N-Channel, FET feature: -, drain to source voltage: 650V, current, continuous drain (id) @ 25°C: 12A (Tj) and rds on (max) @ id, vgs: 119mOhm @ 12A, 10V. This part has a typical lead time of 13 Days from factory and ships with a full manufacturer datasheet available for download. F899MR07W1D7B11ABPSA1 is available through Simplytronix, sourced and verified for authenticity.

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