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FF3MR12KM1HHPSA1 Infineon Technologies
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FF3MR12KM1HHPSA1

Mfr. No: FF3MR12KM1HHPSA1
Mfr.: Infineon Technologies
Category: MOSFET Modules
Description: MOSFET Modules CoolSiC MOSFET half bridge module 1200 V
Lifecycle: Active
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 190A (Tc)
Rds On (Max) @ Id, Vgs 4.44mOhm @ 280A, 18V
Vgs(th) (Max) @ Id 5.1V @ 112mA
Gate Charge (Qg) (Max) @ Vgs 800nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 24200pF @ 800V
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-62MMHB
📦 Product Attributes
Packaging Tray
Standard Pack Qty 10
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,244
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 98 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a mosfet modules component, the FF3MR12KM1HHPSA1 is manufactured and supplied by Infineon Technologies. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 190A (Tc), rds on (max) @ id, vgs: 4.44mOhm @ 280A, 18V and vgs(th) (max) @ id: 5.1V @ 112mA. This part has a typical lead time of 98 Days from factory. Simplytronix carries FF3MR12KM1HHPSA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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