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FF3MR20W3M1HH11BPSA1 Infineon Technologies
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FF3MR20W3M1HH11BPSA1

Mfr. No: FF3MR20W3M1HH11BPSA1
Mfr.: Infineon Technologies
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules EasyPACK module with CoolSiC Trench MOSFET and High Current Pin / NTC
Lifecycle: Active
Datasheet: FF3MR20W3M1HH11BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Phase Leg + Boost Chopper)
FET Feature -
Drain to Source Voltage (Vdss) 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C 275A (Tj)
Rds On (Max) @ Id, Vgs 4.1mOhm @ 320A, 18V
Vgs(th) (Max) @ Id 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs 1560nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 47900pF @ 1500V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 8
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,438
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 70 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

FF3MR20W3M1HH11BPSA1 is a discrete semiconductor modules part produced by Infineon Technologies for use across a range of applications. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Phase Leg + Boost Chopper), FET feature: -, drain to source voltage: 2000V (2kV), current, continuous drain (id) @ 25°C: 275A (Tj) and rds on (max) @ id, vgs: 4.1mOhm @ 320A, 18V. This part has a typical lead time of 70 Days from factory and ships with a full manufacturer datasheet available for download. Order FF3MR20W3M1HH11BPSA1 from Simplytronix for authenticated stock and same-day order processing.

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