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FF4MR12W2M1HPB11BPSA1 Infineon Technologies
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FF4MR12W2M1HPB11BPSA1

Mfr. No: FF4MR12W2M1HPB11BPSA1
Mfr.: Infineon Technologies
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules CoolSiC MOSFET half-bridge module 1200 V
Lifecycle: Active
Datasheet: FF4MR12W2M1HPB11BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 170A
Rds On (Max) @ Id, Vgs 4mOhm @ 200A, 18V
Vgs(th) (Max) @ Id 5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs 594nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 17600pF @ 800V
Power - Max 20mW
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-EASY2B
📦 Product Attributes
Packaging Tray
Standard Pack Qty 18
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,054
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 231 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the FF4MR12W2M1HPB11BPSA1, a discrete semiconductor modules part used in electronic assemblies. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 170A and rds on (max) @ id, vgs: 4mOhm @ 200A, 18V. This part has a typical lead time of 231 Days from factory and ships with a full manufacturer datasheet available for download. You can source FF4MR12W2M1HPB11BPSA1 through Simplytronix, with fast shipping and verified authenticity.

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