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FF55MR12W1M1HB11BPSA1 Infineon Technologies
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FF55MR12W1M1HB11BPSA1

Mfr. No: FF55MR12W1M1HB11BPSA1
Mfr.: Infineon Technologies
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules CoolSiC MOSFET halfbridge module 1200 V
Lifecycle: Active
Datasheet: FF55MR12W1M1HB11BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 15A (Tj)
Rds On (Max) @ Id, Vgs 52.9mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 5.15V @ 6mA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 24
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,877
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 231 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the FF55MR12W1M1HB11BPSA1, a discrete semiconductor modules part used in electronic assemblies. This part is specified with technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 15A (Tj) and rds on (max) @ id, vgs: 52.9mOhm @ 15A, 18V. This part has a typical lead time of 231 Days from factory and ships with a full manufacturer datasheet available for download. You can source FF55MR12W1M1HB11BPSA1 through Simplytronix, with fast shipping and verified authenticity.

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