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FF6MR12W2M1HB11BPSA1 Infineon Technologies
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FF6MR12W2M1HB11BPSA1

Mfr. No: FF6MR12W2M1HB11BPSA1
Mfr.: Infineon Technologies
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules CoolSiC MOSFET half-bridge module 1200 V
Datasheet: FF6MR12W2M1HB11BPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 145A (Tj)
Rds On (Max) @ Id, Vgs 5.4mOhm @ 150A, 18V
Vgs(th) (Max) @ Id 5.15V @ 60mA
Gate Charge (Qg) (Max) @ Vgs 446nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
📦 Product Attributes
Packaging Tray
Standard Pack Qty 15
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,418
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 231 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

The FF6MR12W2M1HB11BPSA1 from Infineon Technologies falls under the discrete semiconductor modules category. Among its key specs are technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 145A (Tj) and rds on (max) @ id, vgs: 5.4mOhm @ 150A, 18V. This part has a typical lead time of 231 Days from factory and ships with a full manufacturer datasheet available for download. FF6MR12W2M1HB11BPSA1 is available through Simplytronix, sourced and verified for authenticity.

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