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FS01MR12A8MA2BHPSA1 Infineon Technologies
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FS01MR12A8MA2BHPSA1

Mfr. No: FS01MR12A8MA2BHPSA1
Mfr.: Infineon Technologies
Category: MOSFET Modules
Description: MOSFET Modules HYBRID PACK DRIVE G2 SIC
Lifecycle: Active
Datasheet: FS01MR12A8MA2BHPSA1 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 6 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 500A (Tj)
Rds On (Max) @ Id, Vgs 1.87mOhm @ 18V, 500A
Vgs(th) (Max) @ Id 4.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 750V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 6
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,079
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 273 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

FS01MR12A8MA2BHPSA1 is a mosfet modules part produced by Infineon Technologies for use across a range of applications. Notable characteristics of this part include technology: Silicon Carbide (SiC), configuration: 6 N-Channel, FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 500A (Tj) and rds on (max) @ id, vgs: 1.87mOhm @ 18V, 500A. This part has a typical lead time of 273 Days from factory and ships with a full manufacturer datasheet available for download. Order FS01MR12A8MA2BHPSA1 from Simplytronix for authenticated stock and same-day order processing.

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