| Mfr. No: | FS03MR12A6MA1LBBPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules HYBRID PACK DRIVE G1 SIC |
| Lifecycle: | Not For New Designs |
| Datasheet: | FS03MR12A6MA1LBBPSA1 Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 400A |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 400A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 240mA |
| Gate Charge (Qg) (Max) @ Vgs | 1320nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 42500pF @ 600V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-HYBRIDD-2 |
| Packaging | Tray |
| Standard Pack Qty | 6 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 273 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| ECCN | EAR99 |
FS03MR12A6MA1LBBPSA1 is a discrete semiconductor modules part produced by Infineon Technologies for use across a range of applications. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 6 N-Channel (3-Phase Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 400A and rds on (max) @ id, vgs: 3.7mOhm @ 400A, 15V. This part has a typical lead time of 273 Days from factory and ships with a full manufacturer datasheet available for download. Order FS03MR12A6MA1LBBPSA1 from Simplytronix for authenticated stock and same-day order processing.