| Mfr. No: | FS1150R08A8P3CHPSA1 |
| Mfr.: | Infineon Technologies |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules HybridPACK Drive G2 module |
| Lifecycle: | Active |
| Datasheet: | FS1150R08A8P3CHPSA1 Datasheet (PDF) |
| IGBT Type | - |
| Configuration | Three Phase Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 750 V |
| Current - Collector (Ic) (Max) | 600 A |
| Power - Max | 1000 W |
| Vce(on) (Max) @ Vge, Ic | 1.21V @ 15V, 600A |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 60800 pF @ 50 V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-HDG2XT-7611 |
| Packaging | Tray |
| Standard Pack Qty | 6 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
FS1150R08A8P3CHPSA1 is a discrete semiconductor modules part produced by Infineon Technologies for use across a range of applications. Technical specifications for this part include IGBT type: -, configuration: Three Phase Inverter, voltage, collector emitter breakdown: 750 V, current, collector (ic): 600 A, power, max: 1000 W and vce(on) (max) @ vge, ic: 1.21V @ 15V, 600A. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order FS1150R08A8P3CHPSA1 from Simplytronix for authenticated stock and same-day order processing.