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FS17MR12W2M1HB11ABPSA2 Infineon Technologies
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FS17MR12W2M1HB11ABPSA2

Mfr. No: FS17MR12W2M1HB11ABPSA2
Mfr.: Infineon Technologies
Category: MOSFET Modules
Description: MOSFET Modules EasyPACK 2B module with CoolSiC Trench MOSFET and PressFIT / NTC
Lifecycle: Active
Datasheet: FS17MR12W2M1HB11ABPSA2 Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 6 N-Channel (Three Phase Inverter)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 40A (Tj)
Rds On (Max) @ Id, Vgs 16.2mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 149nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging Tray
Standard Pack Qty 15
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,170
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 203 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

As a mosfet modules component, the FS17MR12W2M1HB11ABPSA2 is manufactured and supplied by Infineon Technologies. Among its key specs are technology: Silicon Carbide (SiC), configuration: 6 N-Channel (Three Phase Inverter), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 40A (Tj) and rds on (max) @ id, vgs: 16.2mOhm @ 50A, 18V. This part has a typical lead time of 203 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries FS17MR12W2M1HB11ABPSA2 in stock, backed by a genuine parts guarantee and quick dispatch.

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