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IGC019S06S1XTMA1 Infineon Technologies
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IGC019S06S1XTMA1

Mfr. No: IGC019S06S1XTMA1
Mfr.: Infineon Technologies
Category: GaN FETs
Description: GaN FETs CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm
Lifecycle: Active
Datasheet: IGC019S06S1XTMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 35A, 5V
Vgs(th) (Max) @ Id 2.9V @ 12mA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
Vgs (Max) ±6.5V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.3W (Ta), 45W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TSON-6-2
Package / Case 6-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,938
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The IGC019S06S1XTMA1 from Infineon Technologies falls under the gan fets category. Key specifications include FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 27A (Ta), 99A (Tc), drive voltage: 5V and rds on (max) @ id, vgs: 1.9mOhm @ 35A, 5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. IGC019S06S1XTMA1 is available through Simplytronix, sourced and verified for authenticity.

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