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IGLR70R270D2SXUMA1 Infineon Technologies
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IGLR70R270D2SXUMA1

Mfr. No: IGLR70R270D2SXUMA1
Mfr.: Infineon Technologies
Category: GaN FETs
Description: GaN FETs CoolGaN Transistor 700 V G5
Lifecycle: Active
Datasheet: IGLR70R270D2SXUMA1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 330mOhm @ 1.7A
Vgs(th) (Max) @ Id 1.6V @ 560µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 3 V
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 74 pF @ 400 V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TSON-8-8
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,522
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Infineon Technologies manufactures the IGLR70R270D2SXUMA1, a gan fets part used in electronic assemblies. Notable characteristics of this part include FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 700 V, current, continuous drain (id) @ 25°C: 7.3A (Tc), drive voltage: - and rds on (max) @ id, vgs: 330mOhm @ 1.7A. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source IGLR70R270D2SXUMA1 through Simplytronix, with fast shipping and verified authenticity.

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