| Mfr. No: | IXSH65N120L2KHV |
| Mfr.: | IXYS |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L |
| Lifecycle: | Active |
| Datasheet: | IXSH65N120L2KHV Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.5V @ 9mA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 18 V |
| Vgs (Max) | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 800 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
| Packaging | Reel |
| Standard Pack Qty | 450 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
IXYS's IXSH65N120L2KHV is a widely used sic mosfets part in electronic designs. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 65A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 52mOhm @ 20A, 18V. This part has a typical lead time of 189 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies IXSH65N120L2KHV with same-day shipping and guaranteed authenticity.