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LSIC1MO170E0750 IXYS
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LSIC1MO170E0750

Mfr. No: LSIC1MO170E0750
Mfr.: IXYS
Category: SiC MOSFETs
Description: SiC MOSFETs TO247 1.7KV 4.4A N-CH SIC
Lifecycle: Active
Datasheet: LSIC1MO170E0750 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 20 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 450
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,557
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 203 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

LSIC1MO170E0750 is a sic mosfets part produced by IXYS for use across a range of applications. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 6.2A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 1Ohm @ 2A, 20V. This part has a typical lead time of 203 Days from factory and ships with a full manufacturer datasheet available for download. Order LSIC1MO170E0750 from Simplytronix for authenticated stock and same-day order processing.

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