Jantx2N3767

Mfr. No:	Jantx2N3767
Mfr.:	Microchip / Microsemi
Category:	Bipolar Transistors - BJT
Description:	Bipolar Transistors - BJT 80V 4A NPN Power BJT THT
Datasheet:	Jantx2N3767 Datasheet (PDF)

⚙ Specifications

Transistor Type	NPN
Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 100mA, 1A
Current - Collector Cutoff (Max)	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 500mA, 5V
Power - Max	25 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C
Grade	Military
Qualification	MIL-PRF-19500/518
Mounting Type	Through Hole
Package / Case	TO-213AA, TO-66-2
Supplier Device Package	TO-66 (TO-213AA)

📦 Product Attributes

Packaging	Tray
Standard Pack Qty	1

🔁 Alternate / Replacement Parts

Alternate Packaging
Suggested Replacement

10,803

Units In Stock

📦 Tray

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Test report available upon request — view sample report

🔑 Key Specifications

Category	Bipolar Transistors - BJT
RoHS	No
Lifecycle
Lead Time	336 Days (from factory)

📄 Documentation

⬇ Download Datasheet

🌐 Compliance & Export

Country / Standard	Code
CNHTS	8541290000
CAHTS	8541210000
USHTS	8541290065
JPHTS	8541210101
KRHTS	8541219000
TARIC	8541210000
MXHTS	85412101
ECCN	EAR99

ℹ Product Overview

Microchip / Microsemi's Jantx2N3767 is a widely used bipolar transistors - bjt part in electronic designs. Among its key specs are transistor type: NPN, current, collector (ic): 4 A, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 2.5V @ 100mA, 1A, current, collector cutoff: 500µA and DC current gain (hfe) (min) @ ic, vce: 40 @ 500mA, 5V. This part has a typical lead time of 336 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies Jantx2N3767 with same-day shipping and guaranteed authenticity.

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Jantx2N3767