Jantx2N5416S

Mfr. No:	Jantx2N5416S
Mfr.:	Microchip / Microsemi
Category:	Bipolar Transistors - BJT
Description:	Bipolar Transistors - BJT 300 V Power BJT
Lifecycle:	Active
Datasheet:	Jantx2N5416S Datasheet (PDF)

⚙ Specifications

Transistor Type	PNP
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	300 V
Vce Saturation (Max) @ Ib, Ic	2V @ 5mA, 50mA
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 10V
Power - Max	750 mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Grade	Military
Qualification	MIL-PRF-19500/485
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

📦 Product Attributes

Packaging	Bulk
Standard Pack Qty	1

🔁 Alternate / Replacement Parts

Alternate Packaging
Suggested Replacement

13,748

Units In Stock

📦 Bulk

Request a Quote →

24-hour response
Global shipping
Genuine parts guaranteed

Test report available upon request — view sample report

🔑 Key Specifications

Category	Bipolar Transistors - BJT
RoHS	No
Lifecycle
Lead Time	408 Days (from factory)

📄 Documentation

⬇ Download Datasheet

🌐 Compliance & Export

Country / Standard	Code
CNHTS	8541210000
CAHTS	8541290000
USHTS	8541290065
JPHTS	854129000
KRHTS	8541219000
TARIC	8541290000
MXHTS	8541299900
ECCN	EAR99

ℹ Product Overview

The Jantx2N5416S from Microchip / Microsemi falls under the bipolar transistors - bjt category. It features transistor type: PNP, current, collector (ic): 1 A, voltage, collector emitter breakdown: 300 V, vce saturation (max) @ ib, ic: 2V @ 5mA, 50mA, current, collector cutoff: 1mA and DC current gain (hfe) (min) @ ic, vce: 30 @ 50mA, 10V. This part has a typical lead time of 408 Days from factory and ships with a full manufacturer datasheet available for download. Jantx2N5416S is available through Simplytronix, sourced and verified for authenticity.

Search Products

Jantx2N5416S