| Mfr. No: | MSCSM120DAM31CTBL1NG |
| Mfr.: | Microchip Technology |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1 |
| Lifecycle: | Active |
| Datasheet: | MSCSM120DAM31CTBL1NG Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 79A |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 232 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 310W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | - |
| Package / Case | Module |
| Packaging | |
| Standard Pack Qty | 1 |
| Category | Discrete Semiconductor Modules |
| RoHS | |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
Microchip Technology's MSCSM120DAM31CTBL1NG is a widely used discrete semiconductor modules part in electronic designs. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 79A, drive voltage: 20V and rds on (max) @ id, vgs: 31mOhm @ 40A, 20V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies MSCSM120DAM31CTBL1NG with same-day shipping and guaranteed authenticity.