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MSC40SM120JCU3 Microchip Technology
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MSC40SM120JCU3

Mfr. No: MSC40SM120JCU3
Mfr.: Microchip Technology
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227
Lifecycle: Active
Datasheet: MSC40SM120JCU3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 245W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package SOT-227 (ISOTOP®)
Package / Case SOT-227-4, miniBLOC
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,220
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

MSC40SM120JCU3 is a discrete semiconductor modules part produced by Microchip Technology for use across a range of applications. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 55A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 50mOhm @ 40A, 20V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Order MSC40SM120JCU3 from Simplytronix for authenticated stock and same-day order processing.

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