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MSCSM120DAM31CTBL1NG Microchip Technology
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MSCSM120DAM31CTBL1NG

Mfr. No: MSCSM120DAM31CTBL1NG
Mfr.: Microchip Technology
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1
Lifecycle: Active
Datasheet: MSCSM120DAM31CTBL1NG Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 79A
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 232 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 310W
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package -
Package / Case Module
📦 Product Attributes
Packaging
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,667
Units In Stock
📦
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

Microchip Technology's MSCSM120DAM31CTBL1NG is a widely used discrete semiconductor modules part in electronic designs. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 79A, drive voltage: 20V and rds on (max) @ id, vgs: 31mOhm @ 40A, 20V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies MSCSM120DAM31CTBL1NG with same-day shipping and guaranteed authenticity.

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