| Mfr. No: | MSCSM120DHM31CTBL2NG |
| Mfr.: | Microchip Technology |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL2 |
| Lifecycle: | Active |
| Datasheet: | MSCSM120DHM31CTBL2NG Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 79A |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 232nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020pF @ 1000V |
| Power - Max | 310W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
| Packaging | |
| Standard Pack Qty | 1 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
As a discrete semiconductor modules component, the MSCSM120DHM31CTBL2NG is manufactured and supplied by Microchip Technology. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Dual) Asymmetrical, FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 79A and rds on (max) @ id, vgs: 31mOhm @ 40A, 20V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries MSCSM120DHM31CTBL2NG in stock, backed by a genuine parts guarantee and quick dispatch.