Similar Products
| Mfr. No: | MSCSM170TLM11CAG |
| Mfr.: | Microchip Technology |
| Category: | Discrete Semiconductor Modules |
| Description: | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C |
| Lifecycle: | Active |
| Datasheet: | MSCSM170TLM11CAG Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Three Level Inverter) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Current - Continuous Drain (Id) @ 25°C | 238A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 120A, 20V |
| Vgs(th) (Max) @ Id | 3.2V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 712nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 1000V |
| Power - Max | 1114W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | SP6C |
| Packaging | |
| Standard Pack Qty | 1 |
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
Microchip Technology's MSCSM170TLM11CAG is a widely used discrete semiconductor modules part in electronic designs. Notable characteristics of this part include technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Three Level Inverter), FET feature: -, drain to source voltage: 1700V (1.7kV), current, continuous drain (id) @ 25°C: 238A (Tc) and rds on (max) @ id, vgs: 11.3mOhm @ 120A, 20V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies MSCSM170TLM11CAG with same-day shipping and guaranteed authenticity.
