*For representation only.
GAN063-650WSAQ
| Mfr. No: | GAN063-650WSAQ |
| Mfr.: | Nexperia |
| Category: | GaN FETs |
| Description: | GaN FETs TO247 650V 34.5A GAN FET |
| Lifecycle: | Obsolete |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 34.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | GAN041-650WSBQ |
14,499
Units In Stock
📦 Tube
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- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
GAN063-650WSAQ is a gan fets part produced by Nexperia for use across a range of applications. Among its key specs are FET type: N-Channel, technology: GaNFET (Cascode Gallium Nitride FET), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 34.5A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 60mOhm @ 25A, 10V. This part has a typical lead time of 0 Days from factory. Order GAN063-650WSAQ from Simplytronix for authenticated stock and same-day order processing.
