*For representation only.
GAN111-650WSBQ
| Mfr. No: | GAN111-650WSBQ |
| Mfr.: | Nexperia |
| Category: | GaN FETs |
| Description: | GaN FETs GAN111-650WSB/SOT429/TO-247 |
| Datasheet: | GAN111-650WSBQ Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 114mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 336 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3L |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 30 |
12,034
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
GAN111-650WSBQ is a gan fets component manufactured by Nexperia. Key specifications include FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 21A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 114mOhm @ 14A, 10V. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers GAN111-650WSBQ in stock, verified authentic and ready for same-day dispatch.
