*For representation only.
GANC035-650VSHQ
| Mfr. No: | GANC035-650VSHQ |
| Mfr.: | Nexperia |
| Category: | GaN FETs |
| Description: | GaN FETs GANC035-650VSH/SOT8071/TO247-4 |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 131W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 30 |
4,037
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Nexperia's GANC035-650VSHQ is a widely used gan fets part in electronic designs. It features FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 44A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 39mOhm @ 30A, 10V. This part has a typical lead time of 112 Days from factory. Simplytronix supplies GANC035-650VSHQ with same-day shipping and guaranteed authenticity.
