*For representation only.
GANE1R8-100QBAZ
| Mfr. No: | GANE1R8-100QBAZ |
| Mfr.: | Nexperia |
| Category: | GaN FETs |
| Description: | GaN FETs GANE1R8-100QBA/SOT8091/VQFN7 |
| Lifecycle: | Active |
⚙
Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 40A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 21mA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 25-VQFN (4x6) |
| Package / Case | 25-PowerVFQFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
11,098
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 84 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Nexperia manufactures the GANE1R8-100QBAZ, a gan fets part used in electronic assemblies. Among its key specs are FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 100A (Tc), drive voltage: 5V and rds on (max) @ id, vgs: 1.8mOhm @ 40A, 5V. This part has a typical lead time of 84 Days from factory. You can source GANE1R8-100QBAZ through Simplytronix, with fast shipping and verified authenticity.
