*For representation only.
GAN041-650WSBQ
| Mfr. No: | GAN041-650WSBQ |
| Mfr.: | Nexperia |
| Category: | GaN FETs |
| Description: | GaN FETs SOT247 650V 47.2A N-CH MOSFET |
| Lifecycle: | Active |
⚙
Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 47.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 32A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 187W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 30 |
14,316
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 28 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
As a gan fets component, the GAN041-650WSBQ is manufactured and supplied by Nexperia. It features FET type: N-Channel, technology: GaNFET (Cascode Gallium Nitride FET), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 47.2A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 41mOhm @ 32A, 10V. This part has a typical lead time of 28 Days from factory. Simplytronix carries GAN041-650WSBQ in stock, backed by a genuine parts guarantee and quick dispatch.
