*For representation only.
GANC070-650WSHQ
| Mfr. No: | GANC070-650WSHQ |
| Mfr.: | Nexperia |
| Category: | GaN FETs |
| Description: | GaN FETs GANC070-650WSH/SOT429/TO247-3 |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 73W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 30 |
9,003
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
The GANC070-650WSHQ from Nexperia falls under the gan fets category. Among its key specs are FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 23A (Tc), drive voltage: 10V and vgs(th) (max) @ id: 4V @ 3mA. This part has a typical lead time of 112 Days from factory. GANC070-650WSHQ is available through Simplytronix, sourced and verified for authenticity.
