*For representation only.
GANE011-080CBAZ
| Mfr. No: | GANE011-080CBAZ |
| Mfr.: | Nexperia |
| Category: | GaN FETs |
| Description: | GaN FETs GANE011-080CBA/SOT8134/WLCSP9 |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 800mA, 5V |
| Vgs(th) (Max) @ Id | 2.1V @ 2.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 5 V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 268 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 16.2W (Tc) |
| Operating Temperature | -40°C ~ 150°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 9-WLCSP (1.5x1.5) |
| Package / Case | 9-WFBGA, WLCSP |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 2500 |
6,076
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 28 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
The GANE011-080CBAZ from Nexperia falls under the gan fets category. Technical specifications for this part include FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 27A (Tc), drive voltage: 5V and rds on (max) @ id, vgs: 11mOhm @ 800mA, 5V. This part has a typical lead time of 28 Days from factory. GANE011-080CBAZ is available through Simplytronix, sourced and verified for authenticity.
