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GANE7R0-100CBAZ Nexperia
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GANE7R0-100CBAZ

Mfr. No: GANE7R0-100CBAZ
Mfr.: Nexperia
Category: GaN FETs
Description: GaN FETs GANE7R0-100CBA/SOT8090/WLCSP6
Lifecycle: Active
Datasheet: GANE7R0-100CBAZ Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4.3mA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 50 V
FET Feature -
Power Dissipation (Max) 182W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-WLCSP (2.5x1.5)
Package / Case 6-XFBGA, WLCSP
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,042
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Nexperia manufactures the GANE7R0-100CBAZ, a gan fets part used in electronic assemblies. Its datasheet lists FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 29A (Tc), drive voltage: 5V and rds on (max) @ id, vgs: 7mOhm @ 16A, 5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. You can source GANE7R0-100CBAZ through Simplytronix, with fast shipping and verified authenticity.

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