| Mfr. No: | BFU730LXZ |
| Mfr.: | NXP Semiconductors |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors SiGe:C MMIC Transistor |
| Datasheet: | BFU730LXZ Datasheet (PDF) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 3V |
| Frequency - Transition | 53GHz |
| Noise Figure (dB Typ @ f) | 0.75dB @ 6GHz |
| Gain | 15.8dB |
| Power - Max | 160mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 205 @ 2mA, 3V |
| Current - Collector (Ic) (Max) | 30mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Supplier Device Package | DFN1006C-3 |
| Packaging | Reel |
| Standard Pack Qty | 10000 |
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 365 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
BFU730LXZ is a rf bipolar transistors part produced by NXP Semiconductors for use across a range of applications. This component is defined by transistor type: NPN, voltage, collector emitter breakdown: 3V, frequency, transition: 53GHz, noise figure: 0.75dB @ 6GHz, gain: 15.8dB and power, max: 160mW. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Order BFU730LXZ from Simplytronix for authenticated stock and same-day order processing.