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BFU730LXZ NXP Semiconductors
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BFU730LXZ

Mfr. No: BFU730LXZ
Mfr.: NXP Semiconductors
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors SiGe:C MMIC Transistor
Datasheet: BFU730LXZ Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 3V
Frequency - Transition 53GHz
Noise Figure (dB Typ @ f) 0.75dB @ 6GHz
Gain 15.8dB
Power - Max 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce 205 @ 2mA, 3V
Current - Collector (Ic) (Max) 30mA
Operating Temperature -
Mounting Type Surface Mount
Package / Case 3-XFDFN
Supplier Device Package DFN1006C-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,224
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210075
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

BFU730LXZ is a rf bipolar transistors part produced by NXP Semiconductors for use across a range of applications. This component is defined by transistor type: NPN, voltage, collector emitter breakdown: 3V, frequency, transition: 53GHz, noise figure: 0.75dB @ 6GHz, gain: 15.8dB and power, max: 160mW. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Order BFU730LXZ from Simplytronix for authenticated stock and same-day order processing.

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