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| Mfr. No: | NSVF4009SG4T1G |
| Mfr.: | onsemi |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors BIP NPN 40MA 3.5V FT=25G |
| Lifecycle: | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 2GHz |
| Gain | 17dB |
| Power - Max | 120mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 1V |
| Current - Collector (Ic) (Max) | 40mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, Flat Leads |
| Supplier Device Package | SC-82FL/MCPH4 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541109000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
onsemi manufactures the NSVF4009SG4T1G, a rf bipolar transistors part used in electronic assemblies. This component is defined by transistor type: NPN, voltage, collector emitter breakdown: 3.5V, frequency, transition: 25GHz, noise figure: 1.1dB @ 2GHz, gain: 17dB and power, max: 120mW. This part has a typical lead time of 365 Days from factory. You can source NSVF4009SG4T1G through Simplytronix, with fast shipping and verified authenticity.
