*For representation only.
NSVMMBTH10LT1G
| Mfr. No: | NSVMMBTH10LT1G |
| Mfr.: | onsemi |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors SS VHF XSTR SPCL TR |
| Lifecycle: | Active |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Current - Collector (Ic) (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
14,323
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 266 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
The NSVMMBTH10LT1G, made by onsemi, belongs to the rf bipolar transistors product category. Notable characteristics of this part include transistor type: NPN, voltage, collector emitter breakdown: 25V, frequency, transition: 650MHz, noise figure: -, gain: - and power, max: 225mW. This part has a typical lead time of 266 Days from factory. Simplytronix stocks NSVMMBTH10LT1G for same-day shipping with genuine parts guaranteed.
