*For representation only.
TP65H050G4YS
| Mfr. No: | TP65H050G4YS |
| Mfr.: | Renesas Electronics |
| Category: | GaN FETs |
| Description: | GaN FETs 650V, 50mohm GaN FET in TO247-4L |
| Lifecycle: | Active |
| Datasheet: | TP65H050G4YS Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 132W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 600 |
9,435
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Renesas Electronics's TP65H050G4YS is a widely used gan fets part in electronic designs. This part is specified with FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 35A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 60mOhm @ 22A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies TP65H050G4YS with same-day shipping and guaranteed authenticity.
