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TP65H480G4JSG-TR Renesas Electronics
*For representation only.

TP65H480G4JSG-TR

Mfr. No: TP65H480G4JSG-TR
Mfr.: Renesas Electronics
Category: GaN FETs
Description: GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN
Lifecycle: Active
Datasheet: TP65H480G4JSG-TR Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V
Rds On (Max) @ Id, Vgs 560mOhm @ 3.4A, 8V
Vgs(th) (Max) @ Id 2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 8 V
Vgs (Max) ±18V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
FET Feature -
Power Dissipation (Max) 13.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (5x6)
Package / Case 3-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,167
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

As a gan fets component, the TP65H480G4JSG-TR is manufactured and supplied by Renesas Electronics. This part is specified with FET type: N-Channel, technology: GaNFET (Cascode Gallium Nitride FET), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 3.6A (Tc), drive voltage: 8V and rds on (max) @ id, vgs: 560mOhm @ 3.4A, 8V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries TP65H480G4JSG-TR in stock, backed by a genuine parts guarantee and quick dispatch.

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