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SCT018H65G3AG STMicroelectronics
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SCT018H65G3AG

Mfr. No: SCT018H65G3AG
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Datasheet: SCT018H65G3AG Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 27mOhm @ 30A, 18V
Vgs(th) (Max) @ Id 4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 79.4 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 2124 pF @ 400 V
FET Feature -
Power Dissipation (Max) 385W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package H2PAK-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,987
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 175 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

SCT018H65G3AG is a sic mosfets component manufactured by STMicroelectronics. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 55A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 27mOhm @ 30A, 18V. This part has a typical lead time of 175 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers SCT018H65G3AG in stock, verified authentic and ready for same-day dispatch.

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