Search Products

Menu
SCTW90N65G2V STMicroelectronics
*For representation only.

SCTW90N65G2V

Mfr. No: SCTW90N65G2V
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 25mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 400 V
FET Feature -
Power Dissipation (Max) 390W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,905
Units In Stock
📦 Tube
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

SCTW90N65G2V is a sic mosfets component manufactured by STMicroelectronics. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 90A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 25mOhm @ 50A, 18V. This part has a typical lead time of 0 Days from factory. Simplytronix offers SCTW90N65G2V in stock, verified authentic and ready for same-day dispatch.

Similar Products
SCT019HU120G3AG
SCT019HU120G3AG STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 12...
SCT040H65G3AG
SCT040H65G3AG STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 65...
SCTW70N120G2V
SCTW70N120G2V STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ...
SCTL35N65G2V
SCTL35N65G2V STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ....
SCTW40N120G2VAG
SCTW40N120G2VAG STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 12...