Search Products

Menu
SCTW40N120G2VAG STMicroelectronics
*For representation only.

SCTW40N120G2VAG

Mfr. No: SCTW40N120G2VAG
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
Datasheet: SCTW40N120G2VAG Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V
FET Feature -
Power Dissipation (Max) 290W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,724
Units In Stock
📦 Tube
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 175 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

STMicroelectronics's SCTW40N120G2VAG is a widely used sic mosfets part in electronic designs. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 33A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 105mOhm @ 20A, 18V. This part has a typical lead time of 175 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies SCTW40N120G2VAG with same-day shipping and guaranteed authenticity.

Similar Products
SCT019HU120G3AG
SCT019HU120G3AG STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 12...
SCT040H65G3AG
SCT040H65G3AG STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 65...
SCTW70N120G2V
SCTW70N120G2V STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ...
SCTL35N65G2V
SCTL35N65G2V STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ....
SCTW90N65G2V
SCTW90N65G2V STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mO...