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| Mfr. No: | SCT019H120G3AG |
| Mfr.: | STMicroelectronics |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an |
| Datasheet: | SCT019H120G3AG Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 2.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 121 nC @ 18 V |
| Vgs (Max) | +18V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3465 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 555W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | HU3PAK |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 147 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Manufactured by STMicroelectronics, the SCT019H120G3AG is classified under sic mosfets. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 100A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 28mOhm @ 50A, 18V. This part has a typical lead time of 147 Days from factory and ships with a full manufacturer datasheet available for download. Get SCT019H120G3AG from Simplytronix, shipped same day with a genuine parts guarantee.
