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SCT040TO65G3 STMicroelectronics
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SCT040TO65G3

Mfr. No: SCT040TO65G3
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
Datasheet: SCT040TO65G3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 63mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 42.5 nC @ 18 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 853 pF @ 400 V
FET Feature -
Power Dissipation (Max) 288W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TOLL (HV)
Package / Case 8-PowerSFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,834
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 224 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

STMicroelectronics manufactures the SCT040TO65G3, a sic mosfets part used in electronic assemblies. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 35A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 63mOhm @ 20A, 18V. This part has a typical lead time of 224 Days from factory and ships with a full manufacturer datasheet available for download. You can source SCT040TO65G3 through Simplytronix, with fast shipping and verified authenticity.

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