*For representation only.
SCT040W120G3-4
| Mfr. No: | SCT040W120G3-4 |
| Mfr.: | STMicroelectronics |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 16A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 18 V |
| Vgs (Max) | +18V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1329 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 312W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1 |
4,331
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 224 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The SCT040W120G3-4 from STMicroelectronics falls under the sic mosfets category. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 40A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 54mOhm @ 16A, 18V. This part has a typical lead time of 224 Days from factory. SCT040W120G3-4 is available through Simplytronix, sourced and verified for authenticity.
